Publications

Articles (50)

  1. C. Rudolph, H. Wachsmuth, P. Gansauer, T. Werner, M. Junhaehnel, G. Fountain, J. Theil, L. Mirkarimi, “HVM CMP Process Development for Advanced Direct Bond Interconnect (DBI)“, Proceedings of the International Conference on Planarization Technologies, (2022).
  2. J. A. Theil, T. Workman, D. Suwito, L. Mirkarimi, G. Fountain, KM Bang, G. Gao, B. Lee, P. Mrozek, C. Uzoh, M. Huynh, and O. Zhao, “Analysis of Die Edge Bond Pads in Hybrid Bonded Multi-Die Stacks“, 72nd Electronic Components and Technology Conference, (2022).
  3. L. Mirkarimi, C. Uzoh, D. Suwito, G. Fountain, T. Workman, B. Lee, J. Theil, G. Gao, “The Influence of Microstructure on Thermal Budget in Hybrid Bonding”, 72nd Electronic Components and Technology Conference, (2022).
  4. G. Gao, L. Mirkarimi, G. Fountain, D. Suwito, J. Theil, T. Workman, C. Uzoh, B. Lee, KM Bang, G. Guevara, “Die to Wafer Hybrid Bonding for Chiplet and Heterogeneous Integration: Die Size Effects Evaluation-Small Die Applications”, 72nd Electronic Components and Technology Conference, (2022).
  5. J. Theil,  I. Aguiar, S. Bandla, Y. Kavanaugh, “Materials Science Community Support for Teaching Sustainability“, MRS Energy & Sustainability, 8(2) 42-50, (2021). doi: 10.1557/s43581-021-00009-5
  6. T. Workman, L. Mirakarimi, J. Theil, G. Fountain, KM  Bang, B. Lee, C. Uzoh, D. Suwito, G. Gao, and P. Mrozek, “Die to Wafer Hybrid Bonding and Fine Pitch Considerations“, Proceedings of the 71st Electronic Components and Technology Conference, (2021).
  7. G. Gao, L. Mirkarimi, G. Fountain, D. Suwito, J. Theil, T. Workman, C. Uzoh, G. Guevara, B. Lee, M. Huynh, and P. Mrozek, “Low Temperature Hybrid Bonding for Die to Wafer Stacking Applications“, Proceedings of the 71st Electronic Components and Technology Conference, (2021).
  8. G. Gao, L. Mirkarimi, G. Fountain, T. Workman, J. Theil, G. Guevara, C. Uzoh, D. Suwito, B. Lee, K. M. Bang, R. Katkar, “Die to Wafer Stacking with Low Temperature Hybrid Bonding”, Electronic Components and Technology Conference, (2020).
  9. J. A. Theil, L. Mirkarimi, G. Fountain, G. Gao, and R. Katkar, “Recent Developments in Fine Pitch Wafer-to-Wafer Hybrid Bonding with Copper Interconnect”, Conference Proceedings, 2019 International Wafer Level Packaging, Conference (IWLPC), 1 (2019)
  10. G. Gao, T. Workman, L. Mirkarimi, G. Fountain, J. Theil, G. Guervara, B. Lee, P. Liu, and P. Mzorek, “Chip to Wafer Hybrid Bonding with Cu Interconnect: Manufacturability and High Volume Compatibility Study”, Conference Proceedings, 2019 International Wafer Level Packaging, Conference (IWLPC), 1 (2019)
  11. B. Lee, P. Mrozek, G. Fountain, J. Posthill, J. Theil, G. Gao, R. Katkar, and L. Mirkarimi, “Nanoscale Topography Characterization for Direct Bond Interconnect”, 69th IEEE Electronic Components and Technology Conference Proceedings, (2019).
  12. G. Gao, L. Mirkarimi, C. Rudolph, T. Werner, A. Hanisch, T. Workman, G. Fountain, J. Theil, G. Guevara, P. Liu, and B. Lee, “Low-Temperature Cu Interconnect with Chip-to-Wafer Hybrid Bonding”, 69th IEEE Electronic Components and Technology Conference Proceedings, (2019).
  13. G. Gao, L. Mirkarimi, T. Workman, G. Guevara, J. Theil, C. Uzoh, G. Fountain, B. Lee, P. Mrozek, M. Huynh, R. Katkar, “Development of Low Temperature Direct Bond Interconnect Technology for Die-To-Wafer and Die-To-Die Applications-Stacking, Yield Improvement, Reliability Assessment”, Conference Proceedings, 2018 International Wafer Level Packaging, Conference (IWLPC), 1 (2018).
  14. Q. Long, S. A. Dinca, E. A. Schiff, M. Yi, and J. Theil, “Electron and hole drift mobility measurements on thin film CdTe solar cells”, Applied Physics Letters, 105, 042106 (2014).
  15. S. Kohli, J. A. Theil, P. R. McCurdy, P. C. Dippo, R. K. Ahrenkiel, C. D. Rithner, and P. K. Dorhout, “Spectroscopic ellipsometry and photoluminescence measurements of as-deposited and annealed silicon rich oxynitride films”, Thin Solid Films, 516, 4342 (2008).
  16. M. Agarwal, D. Dutton, J. A. Theil, Q. Bai, E. Par and S. Hoen, “Characterization of a Dipole Surface Drive Actuator with Large Travel and Force”, Journal of Microelectromechanical Systems, 15(6), 1726 (2006).
  17. Jeremy A. Theil, editor-in-chief, Materials Research Society Symposium Proceeding 869, “Materials, Integration and Technology for Monolithic Instruments”, (2005).
  18. Jeremy A. Theil, “Reduction of Residual Transient Photocurrents in a Si:H Elevated Photodiode Array Based CMOS Image Sensors”, MRS Symp. Proc., 869, D1.3 (2005).
  19. Sandeep Kohli, Jeremy A. Theil, Patricia C. Dippo, Richard K. Ahrenkiel, Christopher D. Rithner, Peter K. Dorhout, “Chemical, optical vibrational, and luminescent properties of hydrogenated silicon-rich oxynitride films”, Thin Solid Films, 473, 89-97 (2005).
  20. Sandeep Kohli, Jeremy A. Theil, Patricia C Dippo, KM Jones, Mowafak M. Al-Jassim , Richard K. Ahrenkiel, Christopher D. Rithner, and Peter K. Dorhout, “Nanocrystal formation in annealed a- SiO17N0.07:H films”, Nanotechnology, 15, 1831-1836 (2004).
  21. Jeremy Theil, “Suppression of Staebler-Wronski Effect Electrical Crosstalk in a-Si:H-Based Image Sensors”, MRS Symp. Proc., 808, 10.6 (2004).
  22. S. Kohli, J. A. Theil, R. K. Sharma, C. D. Rithner, and P. K. Dorhout, “Nanocrystal formation in thermally oxidized a-Si:H films and annealed SiOxNy films with x=0.17; y=0.07)”, Proc. of SPIE, 5224, 8-16 (2003).
  23. Jeremy A. Theil, “Leakage Current Behavior in Common i‐layer a‐Si:H p‐i‐n Photodiode Arrays”, MRS Symp. Proc., 762, 21.4 (2003).
  24. Review Article: Jeremy A. Theil, “Advances in Elevated Diode Technologies for Integrated Circuits: Progress Towards Monolithic Instruments”, IEE Proceedings Circuits, Devices, and Systems, 150(4) 235 (2003).
  25. Sandeep Kohli, Jeremy A. Theil, Rick D. Snyder, Christopher D. Rithner, and Peter K. Dorhout, “Fabrication and characterization of silicon nanocrystals by thermal oxidation of a-Si:H films in air”. Vac. Sci. and Technol. B, 21(2) 719 (2003).
  26. Jeremy A. Theil, Rick Snyder, David Hula, Kirk Lindahl, Homayoon Haddad, and Jim Roland, “a-Si:H photodiode technology for advanced CMOS active pixel sensor imagers”, Non-Cryst. Sol., 299, 1234 (2002).
  27. Jeremy A. Theil, Homayoon Haddad, Rick Snyder, Mike Zelman, David Hula, and Kirk Lindahl, “Performance of a-Si:H Photodiode Technology-Based Advanced CMOS Active Pixel Sensor Imagers”, Proceedings of the SPIE, 4435, 206 (2001).
  28. Howard E. Abraham, Homer Antoniadis, Daniel B. Roitman, Kyle Frischknecht, Travis N. Blalock, Ken A. Kishimura, Thomas A. Knotts, Jeremy Theil, Chris Bright, Jeffrey N. Miller, Ron Moon, “XGA 
resolution full video microdisplay using light emitting polymers on a silicon active matrix circuit”, Proceedings of the SPIE, 4105, 37 (2001).
  29. Jeremy A. Theil, Min Cao, Gerrit Kooi, Gary W. Ray, Wayne Greene, Jane Lin, AJ Budrys, Uija Yoon, Shawming Ma, and Hans Stork, “Hydrogenated Amorphous Silicon Photodiode Technology for Advanced CMOS Active Pixel Sensor Imagers“, MRS Symp. Proc., 609, A14.3.1 (2000).
  30. Jeremy Theil, Dale Lefforge, Gerrit Kooi, Min Cao, and Gary Ray, “Mid-gap states measurements of low-level boron-doped a‐Si:H films“, Non-cryst. Sol., 266-269, 569 (2000).
  31. Review Article: Jeremy A. Theil, “Fluorinated amorphous carbon films for low permittivity interlayer dielectrics”, Vac. Sci. and Technol. B, 17 (6), 2397-2410 (1999).
  32. Jeremy A. Theil, Francoise Mertz, Gerrit Kooi, Karen Seaward, and Gary Ray, “The effect of thermal cycling on a-C:F,H low dielectric constant films deposited by ECR plasma enhanced chemical vapor deposition“, 1st Intl. Interconnect Tech. Conf., 128 (1998).
  33. Jeremy A. Theil, Francoise Mertz, Micah Yairi, Karen Seaward, Gary Ray, and Gerrit Kooi, “Thermal Stability of a-C:F,H Films Deposited by Electron Cyclotron Resonance Plasma Enhanced Chemical Vapor Deposition“, Res. Soc. Symp. Proc., 476, 31 (1997).
  34. Jeremy A. Theil, Eiji Kusano, Angus Rockett, “Vanadium Reactive Magnetron Sputtering in Mixed Ar / O2Discharges“, Thin Solid Films, 298, 122 (1997).
  35. K. Nauka, J. Theil, J. Lagowski, L. Jastrzebski, and S. Sawtchouk, “A complete approach to the in- line monitoring of materials defects introduced in dielectric and Si by plasma processing“, Proceedings of Second International Symposium on Plasma Process Induced Damage, Monterey, CA , 127 (1997).
  36. K. Nauka, J. Theil, C. Chi, W. M. Greene, and J. L. Shohet, “Surface Photovoltage and Contact Potential Difference Imaging of Defects Introduced by Plasma Processing of IC Devices“, Proceedings of First International Symposium on Plasma Process-Induced Damage, Santa Clara, CA, 34 (1996).
  37. Jeremy A. Theil, “Deep trench fabrication by Si (110) orientation dependent etching“, Vac. Sci. and Technol. B, 13(5), 2145 (1995).
  38. Jeremy A. Theil, “Sticking probability studies of SiO2 and polymerized siloxane thin films by plasma enhanced chemical vapor deposition“, Res. Soc. Symp. Proc., 385, 97 (1995).
  39. R. W. Knoll, and J. A. Theil, “Effects of process parameters on PECVD silicon-oxide and aluminum oxide barrier films“, 38th Soc. Vac. Coaters Conf. Proc., 425 (1995).
  40. Jeremy A. Theil, “Gas distribution through injection manifolds in vacuum systems“, Vac. Sci. and Technol. A, 13 (2), 442 (1995).
  41. Jeremy A. Theil, J. G. Brace, and R. W. Knoll, “The carbon content of silicon sub-oxide films deposited by room temperature PECVD of hexamethyldisiloxane and oxygen“, Vac. Sci. and Technol. A, 12 (4), 1365 (1994).
  42. Jeremy A. Theil, and G. Powell, “The Effects of He Plasma Interactions with SiH4 for silicon thin film 
Growth by Remote Plasma Enhanced Chemical Vapor Deposition“, Appl. Phys., 75 (5), 2652 (1994).
  43. Jeremy A. Theil, S.V. Hattangady, and G. Lucovsky, “The effect of NH3, N2 and excitation frequency on the reaction chemistry for Si3N4 thin film growth by remote plasma enhanced chemical vapor deposition“, Vac. Sci. and Technol. A, 10 (4), 719 (1992).
  44. Jeremy A. Theil, G. Lucovsky, S.V. Hattangady, G.G. Fountain, and R.J. Markunas, “Studies of SiH2Cl2/H2 gas phase chemistry for selective thin film growth of crystalline silicon, c-Si, using remote plasma enhanced chemical vapor deposition“, Mat. Res. Soc. Symp. Proc., 220, 601 (1991).
  45. Jeremy A. Theil, D.V. Tsu, M.W. Watkins, S.S. Kim, and G. Lucovsky, “Local bonding environments of SiOH groups in SiO2 incorporated during deposition by remote PECVD, and incorporated by post- 
deposition exposure to water vapor“, Vac. Sci. and Technol. A, 8 (3), 1374 (1990).
  46. D. V. Tsu, S. S. Kim, J. A. Theil, Cheng Wang, and G. Lucovsky, “Formation of Multilayer SiO2-SiOx Heterostructures by Control of Reaction Pathways in Remote PECVD”, Mat. Res. Soc. Symp. Proc., 165, 209 (1990).
  47. D. V. Tsu, S. S. Kim, J. A. Theil, Cheng Wang, and G. Lucovsky, “Preparation and properties of SiO2– SiOx heterostructures formed by uninterrupted processing by remote plasma enhanced chemical vapor deposition“, J. Vac. Sci. and Technol. A, 8 (3), 1430 (1990).
  48. Jeremy A. Theil, D.V. Tsu, and G. Lucovsky, “Reaction pathways for the elimination of bonded hydrogen in low temperature plasma deposited silicon dioxide“, J. Electron. Mat., 19 (3), 209 (1989).
  49. E. Kusano, J. A. Theil, “Effects of Microstructure and Non-stoichiometry on Electrical Properties of Vanadium Dioxide Films“, J. Vac. Sci. and Technol. A, 7 (3), 1314 (1989).
  50. E. Kusano, J. A. Theil, J. A. Thornton, “Deposition of vanadium oxide films by direct-current magnetron reactive sputtering“, J. Vac. Sci. and Technol. A, 6 (3), 1663 (1988).

PRESENTATIONS (24)

  1. Jeremy A. Theil, T. Workman, D. Suwito, L. Mirkarimi, G. Fountain, KM Bang, G. Gao, B. Lee, P. Mrozek, C. Uzoh, M. Huynh, and O. Zhao, “Analysis of Die Edge Bond Pads in Hybrid Bonded Multi-Die Stacks, 72nd Electronic Components and Technology Conference, (2022).
  2. Jeremy Theil, L. Mirkarimi, G. Fountain, G. Gao, and R. Katkar, “Recent Developments in Fine Pitch Wafer-to-Wafer Hybrid Bonding with Copper Interconnect”, 2019 International Wafer Level Packaging, Conference (IWLPC).
  3. Jeremy A. Theil, “Water Deficits and Opportunities in the United States”, California Climate Change Symposium 2015.
  4. Jeremy A. Theil, “Reduction of Residual Transient Photocurrents in a-Si:H Elevated Photodiode Array Based CMOS Image Sensors”, MRS Spring 2005.
  5. Jeremy A. Theil, “Suppression of Staebler-Wronski Effect Electrical Crosstalk in a-Si:H-Based Image Sensors”, MRS Spring 2004.
  6. Jeremy A. Theil, “Leakage Current behavior in Common i‐layer a‐Si:H p‐i‐n Photodiode Arrays”, MRS Spring 2003.
  7. Jeremy A. Theil, Rick Snyder, David Hula, Kirk Lindahl, Homayoon Haddad, and Jim Roland, “a-Si:H photodiode technology for advanced CMOS active pixel sensor imagers”, 19th Int’l Conf. on Amorphous Mat. and Semicond., August 2001.
  8. Jeremy A. Theil, Homayoon Haddad, Rick Snyder, Mike Zelman, David Hula, and Kirk Lindahl, “Performance of a-Si:H Photodiode Technology-Based Advanced CMOS Active Pixel Sensor Imagers”, SPIE, 4435B, (2001).
  9. Jeremy A. Theil, Min Cao, Gerrit Kooi, Gary W. Ray, Wayne Greene, Jane Lin, AJ Budrys, Uija Yoon, Shawming Ma, and Hans Stork, “Hydrogenated Amorphous Silicon Photodiode Technology for Advanced CMOS Active Pixel Sensor Imagers“, MRS Spring 2000, April 2000.
  10. Jeremy Theil, Dale Lefforge, Gerrit Kooi, Min Cao, and Gary Ray, “Mid-gap states measurements of low-level boron-doped a‐Si:H films“, 18th Int’l Conf. on Amorphous Mat. and Semicond., August 1999.
  11. Jeremy A. Theil, Francoise Mertz, Gerrit Kooi, Karen Seaward, and Gary Ray, “The effect of thermal cycling on a-C:F,H low dielectric constant films deposited by ECR plasma enhanced chemical vapor deposition“, 1st Intl. Interconnect Tech. Conf. , June 1998.
  12. Invited: 10th Schumacher Symposium, San Diego, CA, “Organic Low Dielectric Constant Materials Deposited by Plasma Assisted CVD Techniques“, March 1998.
  13. Spring 1997 Mat. Res. Soc. Symp., San Francisco, CA, “Thermal Stability of a-C:F,H Films Deposited by Electron Cyclotron Resonance Plasma Enhanced Chemical Vapor Deposition“, April 1997.
  14. Spring 1995 Mat. Res. Soc. Symp., San Francisco, CA, “Sticking probability studies of SiO2 and polymerized siloxane thin films by plasma enhanced chemical vapor deposition“, April 1995.
  15. 40th American Vacuum Society Conference, “The carbon content of silicon sub-oxide films deposited by room temperature PECVD of hexamethyldisiloxane and oxygen“, November 1993.
  16. 38th American Vacuum Society Conference, “The effect of NH3, N2 and excitation frequency on the reaction chemistry for Si3N4 thin film growth by remote plasma enhanced chemical vapor deposition“, November 1991.
  17. Spring 1991 Mat. Res. Soc. Symp., Anaheim, CA, “Studies of SiH2Cl2/H2 gas phase chemistry for selective thin film growth of crystalline silicon, c-Si, using remote plasma enhanced chemical vapor deposition“, May 1991.
  18. 37th American Vacuum Society Conference, Boston, MA, “Local bonding environments of SiOH groups in SiO2 incorporated during deposition by remote PECVD, and incorporated by post- 
deposition exposure to water vapor“, November. 1990.
  19. North Carolina State University, Raleigh, NC, “Uses and limitations of molecular models for vibrational mode calculations in amorphous materials”, May 1990.
  20. Mat. Conf., Cambridge, MA, “Reaction pathways for the elimination of bonded hydrogen in low temperature plasma deposited silicon dioxide“, July 1989.
  21. 35th American Vacuum Society Conference, Atlanta, GA, “Simulation of planar DC reactive magnetron sputtering in the V-O system“, October 1988.
  22. 35th American Vacuum Society Conference, Atlanta, GA, “Effects of Microstructure and Nonstoichiometry on Electrical Properties of Vanadium Dioxide Films“, poster, October 1988.
  23. Summer meeting of the Illinois Chapter of the American Vacuum Society, Argonne, IL, “Effects of Sputtering Conditions on Microstructure Nonstoichiometry of Vanadium Dioxide Films“, poster, August 1988.
  24. 12th Int’l. Conf. Metal. Coat., San Diego, CA, “Kinetic processes in planar magnetron DC reactive sputtering of vanadium oxide“, April 1988.

PATENTS (64) AND PATENT APPLICATIONS (16)

  1. US12100676, Low temperature bonded structures, (Assignee: Adeia 2024).
  2. US12046571, Low temperature bonded structures, (Assignee: Adeia 2024).
  3. US20240243103, Molded direct bonded and interconnected stack, (Assignee: Adeia 2024).
  4. US20240234159, Method for Preparing a Surface for Direct-Bonding, (Assignee: Adeia 2024).
  5. US20240213191, Controlled Grain Growth for Bonding and Bonded Structure with, Controlled Grain Growth, (Assignee: Adeia 2024).
  6. US20240136196, Method for preparing a surface for Direct Bonding, (Assignee: Adeia 2024).
  7. US20240113059, Low Temperature Bonded Structures, (Assignee: Adeia 2024).
  8. US20240047344, Interconnect Structures, (Assignee: Adeia 2024).
  9. US11837582, Molded direct bonded and interconnected stack, (Assignee: Adeia 2023).
  10. US20230361074, Low Temperature Direct Bonding, (Assignee: Adeia 2023).
  11. US11804377, Method for preparing a surface for direct-bonding, (Assignee: Adeia 2023).
  12. US20230299029, Expansion Control for Bonding, (Assignee: Adeia 2023).
  13. US11764189, Molded direct bonded and interconnected stack, (Assignee: Adeia 2023).
  14. US11756880, Interconnect Structures, (Assignee: Adeia 2023).
  15. US20230268308, Chemical Mechanical Polish for Hybrid Bonding, (Assignee: Adeia 2023).
  16. US20230268307, Low Temperature Bonded Structures, (Assignee: Adeia 2023).
  17. US20230268300, Bonded Structures, (Assignee: Adeia 2023).
  18. US20230253367, Molded Direct Bonded and Interconnected Stack, (Assignee: Adeia 2023).
  19. US20230197453, Structure with Conductive Feature for Direct Bonding and Method of Forming Same, (Assignee: Adeia 2023).
  20. US20230197496, Direct Bonding and Debonding of Elements, (Assignee: Adeia 2023).
  21. US20230197655, Low Stress Direct Hybrid Bonding, (Assignee: Adeia 2023).
  22. US20230140107, Direct Bonding Methods and Structures, (Assignee: Adeia 2023).
  23. US11552041, Chemical Mechanical Polishing For Hybrid Bonding, (Assignee: Adeia 2023).
  24. US11515279, Low Temperature Bonded Structures (Assignee, Adeia 2022).
  25. US11244916, Low temperature bonded structures (Assignee: Xperi, 2022).
  26. US11158606, Molded direct bonded and interconnect stack(Assignee: Xperi, 2021).
  27. US11158573, Interconnect structures (Assignee: Xperi, 2021).
  28. US11056348, Bonding surfaces for microelectronics (Assignee: Xperi, 2021).
  29. US10790262, Low Temperature Bonded Structures (Assignee: Xperi 2020).
  30. US20200013754, Molded direct bonding and interconnected stack (Assignee: Xperi, 2019).
  31. US10840205, Chemical Mechanical Polishing for hybrid bonding. (Assignee: Invensas, 2020)
  32. WO2015021124, EP3031084A1, Vacuum deposition system for solar cell production, (Assignee: First Solar, 2014)
  33. US7939022, Integration of colorimetric transducers and detector. (Assignee: Avago Technologies, May 10, 2011)
  34. US7096716, Integration of thermal regulation and electronic fluid sensing. (Assignee: Avago Technologies, August 29, 2006)
  35. US20060138312 Solid-State Spectrophotometer. (Assignee: Avago Technologies, 2006)
  36. US6902946, Simplified upper electrode contact structure for PIN diode active pixel sensor. (Assignee: Agilent Technologies, June 7, 2005)
  37. US6747773, Method and structure for stub tunable resonant cavity for photonic crystals. (Assignee: Agilent Technologies, June 8, 2004)
  38. US6384460 Self-aligned metal electrode structure for elevated sensors. (Assignee: Agilent Technologies, May 7, 2002).
  39. US6436488, EP1164206, JP2002047568A High deposition rate hydrogenated amorphous silicon (Method, material, and apparatus). (Assignee: Agilent Technologies, December 19, 2001).
  40. US6325977 Sensor array for detecting organic molecules by optical means. (10991470-1) (Assignee: Agilent Technologies, December 4, 2001).
  41. US6396118, EP1122790 A conductive mesh bias connection for an array of elevated active pixel sensors. (Assignee: Agilent Technologies, May 28, 2002).
  42. US6215164 Elevated image sensor array which includes isolation between uniquely shaped image sensors. (Assignee: Agilent Technologies, April 10, 2001).
  43. US20050007473, Reducing Image Sensor Lag. (Assignee: Agilent Technologies).
  44. US20040146242, Method and structure for coupling light in and out of an inplane waveguide through the top and bottom surfaces of photonic crystals. (Assignee: Agilent Technologies).
  45. US20050210988 Method of making piezoelectric cantilever pressure sensor array. (assignee: Agilent Technologies, 2004)
  46. US6387736, EP1049150 Method and structure for bonding layers in a semiconductor device. (Assignee: Agilent Technologies, May 14, 2002).
  47. US6373117, EP1050907, JP2001007310 A stacked multiple photosensor structure including independent electrical connections to each photosensor. (Assignee: Agilent Technologies, April 16, 2006)
  48. US6759724 Isolation of alpha silicon diode sensors through ion implantation. (Assignee: Agilent Technologies, July 6, 2004).
  49. US6586812, EP1045450 Isolation of alpha silicon diode sensors through ion implantation. (Assignee: Agilent Technologies, July 1, 2003).
  50. US6545711, JP2000138363 A photodiode pixel sensor array having a guard ring. (Assignee: Hewlett- Packard Company, April 8, 2003)
  51. US6114739 Elevated pin diode active pixel sensor which includes a patterned doped semiconductor electrode. (Assignee: Agilent Technologies, September 5, 2000).
  52. US6083572 Organic low-dielectric constant films deposited by plasma enhanced chemical vapor deposition. (Assignee: Hewlett-Packard Company, July 4, 2000).
  53. EP0999596 Sensor Array. (Assignee: Hewlett-Packard Company, June 10, 2000).
  54. US20060210427, Integrated chemical sensing system. (Assignee: Agilent Technologies.)
  55. EP0996164, JP2001007310 An elevated pin diode active pixel sensor including a unique interconnection structure. (Assignee: Hewlett-Packard Company, April 26, 2000).
  56. US6051867, EP1052698, JP2001024059 An improved interlayer dielectric for passivation of an elevated integrated circuit sensor structure. (Assignee: Hewlett-Packard Company, April 18, 2000).
  57. US6027995 Method for Fabricating an Interconnect Structure with Hard Mask and Low Dielectric Constant Materials. (Assignee: Intel Corporation, February 22, 2000).
  58. US6018187, JP2000133792 An elevated pin diode active pixel sensor including a unique interconnection structure. (Assignee: Hewlett-Packard Company, January 25, 2000).
  59. US6016011, EP1049158 Method and apparatus for a dual-inlaid damascene contact to sensor. (Assignee: Hewlett-Packard Company, January 18, 2000).
  60. US5936261, JP2000156488 Elevated image sensor array which includes isolation between the image sensors and a unique interconnection. (Assignee: Hewlett-Packard Company, August 10, 1999)
  61. US5886410 Interconnect structure with hard mask and low dielectric constant materials (Assignee: Intel Corporation, March 23, 1999).
  62. US6759262 Image sensor with pixel isolation system and manufacturing method therefore (Assignee: Agilent Technologies, July 6, 2004).
  63. EP1195987, JP2002152596 System circuit and method for image lag photosensors.
  64. US6376275 A self-aligned metal electrode structure for elevated sensors. (Assignee: Agilent Technologies, April 23, 2002)
  65. US6649993 Simplified pixel isolation apparatus for an array device, and method for forming said apparatus (Assignee: Agilent Technologies, November 18, 2003).
  66. An improved biasing connection for an array of photodiodes.
  67. Isolation of a‐Si:H by CMP using dielectric as barriers.
  68. US6747773, JP2004151722 Method and Structure for Stub Tunable Resonant Cavity for Photonic Crystals (10020498-1). (Assignee: Agilent Technologies, June 8, 2003).
  69. US6786968 Method for Low Temperature Photonic Crystal Structures. (Assignee: Agilent Technologies, September 7, 2004).
  70. US7152758 Scented material dispense system for a hand-held device. (Assignee: Avago Technologies, December 26, 2006).
  71. R. W. Knoll, and J. A. Theil, “Use of a Liquid in Plasma Treatment of the Surface of a Container”, 1993.
  72. J. A. Theil, “Method for Determining Permeability, Diffusion Coefficient, and Solubility Using Transient Permeation Data.”, 1993.
  73. J. A. Theil, “Plasma Electrode Configuration for Enabling Thin Film Coatings on Three Dimensional Objects.”, 1992. Filed.